Simulasi dan Analisis Algoritme Replacement LIRS-WSR

Pratama, Vinsensius Yuda (2023) Simulasi dan Analisis Algoritme Replacement LIRS-WSR. Other thesis, Institut Teknologi Sepuluh Nopember.

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Abstract

Seiring dengan berkembangnya teknologi informasi, pertukaran informasi dapat dengan dilakukan dengan perangkat selular. Pada umumnya perangkat selular dilengkapi dengan media peyimpanan flash memory dikarenakan memiliki ukuran yang kompak, dan hanya memerlukan konsumsi daya yang rendah. Terdapat 2 jenis flash memory yaitu : NAND flash memory, dan NOR flash memory. NAND flash memory didesain untuk penyimpanan data, sedangkan NOR flash memory didesain sebagai pengganti Electrically Erasable Programmable Read-Only Memory (EEPROM). Yang akan dibahas dalam penelitian ini
adalah NAND flash memory. Pada penyimpanan NAND flash memory terdapat latensi operasi I/O yang dikarenakan sebagai berikut: operasi read memakan waktu lebih cepat dari pada operasi write/erase. Oleh karena itu untuk menjaga kinerja dari penyimpanan flash memory dari latensi I/O diperlukan algoritme buffer replacement. Beberapa algoritme buffer
replacement yang sudah dibuat adalah: Least Recently Used (LRU), Adaptive Replacement Cache (ARC), Low Inter-reference Recency Set (LIRS), dan Low Inter-reference Recency Set
Write Sequence Reordering (LIRS-WSR). LIRS-WSR merupakan pengembangan replacement algorithm LIRS dengan melakukan reordering writes non-cold dirty page dari buffer cache ke flash memory. Untuk meneliti lebih lanjut, Tugas Akhir ini akan mengimplementasikan algoritme LIRSWSR dengan bahasa GO. Algoritme LIRSWSR akan diuji dengan data trace dari UMass Trace Repository dan SNIA IOTTA Repository.
Algoritme LIRSWSR ajan dibandingkan dengan algoritme LRU dan LIRS. Kinerja yang dibandingkan berupa jumlah operasi tulis dan hit ratio. ====================================================================================================================================
Along with the development of information technology, information exchange can be done with mobile devices. In general, cellular devices are equipped with flash memory
storage media because they have a compact size, and only require low power consumption.
There are 2 types of flash memory, namely: NAND flash memory and NOR flash memory. NAND flash memory is designed for data storage, while NOR flash memory is designed as a replacement for Electrically Erasable Programmable Read-Only Memory (EEPROM). What will be discussed in this research is NAND flash memory. In NAND flash memory storage there is a latency of I/O operations due to the following: read operations take a shorter time than write/erase operations. Therefore, to maintain the performance of flash memory storage from I/O latency, a buffer replacement algorithm is needed. Several buffer replacement algorithms that have been developed are: Least Recently Used (LRU), Adaptive replacement Cache (ARC), Low Inter-reference Recency Set (LIRS), and Low Inter-reference Recency Set Write Sequence Reordering (LIRS-WSR). LIRS-WSR is the development of the LIRS replacement algorithm by reordering non-cold dirty page writes from the buffer cache to flash memory. For further research, this Final Project will implement the LIRSWSR algorithm in GO language. The LIRSWSR algorithm will be tested with trace data from the UMass Trace Repository and SNIA IOTTA Repository. The LIRSWSR algorithm will be compared with the LRU and LIRS algorithms. The performance compared is the number of write operations and hit ratio.

Item Type:	Thesis (Other)
Uncontrolled Keywords:	flash memory,Algoritme Replacement, flash memory ,Replacement Algorithm
Subjects:	T Technology > T Technology (General) > T57.5 Data Processing
Divisions:	Faculty of Intelligent Electrical and Informatics Technology (ELECTICS) > Informatics Engineering > 55201-(S1) Undergraduate Thesis
Depositing User:	Vinsensius Yuda Pratama
Date Deposited:	07 Aug 2023 03:37
Last Modified:	07 Aug 2023 03:37
URI:	http://repository.its.ac.id/id/eprint/102871

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