Ananta, Dhea Tirta (2024) Pengaruh Ketebalan Lapisan Cu2O dengan Metode Chemical bath deposition dan Temperatur Annealing terhadap Unjuk Kerja DSSC Menggunakan Anodafoto Heterojunction p-Cu2O/n-TiO2-Grafit. Other thesis, Institut Teknologi Sepuluh Nopember.
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Abstract
Semikonduktor tipe-n seperti TiO2 banyak digunakan dalam fabrikasi Dye Sensitized Solar Cell. Namun, keterbatasan band gap yang besar menghambat penyerapan spektrum Cahaya matahari. Dilakukan pembuatan lapisan heterojunction dengan menambahkan semikonduktor tipe-p berupa Cu2O di atas lapisan TiO2 dengan metode chemical bath deposition dan teknik SILAR untuk memperkecil band gap dan memperlebar spektrum serapan cahaya. Penelitian berfokus untuk menganalisis pengaruh ketebalan lapisan Cu2O yang diperoleh dari variasi jumlah siklus CBD 10, 20, dan 50, serta temperatur annealing 200 ºC, 250 ºC, dan 300 ºC. Karakterisasi lapisan heterojunction dilakukan dengan menggunakan teknik XRD, SEM, cross sectional SEM, dan UV-Vis. Hasil karakterisasi XRD menunjukkan Cu2O dengan kemurnian rendah karena kemunculan CuO akibat oksidasi. Pemindaian SEM mendapatkan Cu2O dengan bentuk octahedron pada temperatur annealing 200 ºC serta octahedron terpancung pada temperatur annealing 250 ºC dan 300 ºC. Analisis UV-Vis menemukan bahwa band gap TiO2 semakin kecil seiring dengan peningkatan temperatur annealing. Band gap juga menunjukkan nilai yang semakin kecil seiring dengan penambahan jumlah siklus. Namun, beberapa data menunjukkan peningkatan band gap akibat pengaruh fraksi CuO yang lebih besar daripada fraksi Cu2O dalam lapisan. Sementara nilai direct band gap semikonduktor tipe-p menunjukkan nilai yang gap cenderung mendekati nilai band gap senyawa dengan fraksi yang lebih besar. Adapun hasil fabrikasi DSSC terbaik diperoleh dengan variasi temperatur annealing 250 ºC dan jumlah siklus CBD 20 dengan penambahan dopan grafit dengan efisiensi mencapai 0,844%.
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N-type semiconductors such as TiO2 are widely used in Dye Sensitized Solar Cell fabrication. However, the limitation of a large band gap inhibits the absorption of the sunlight spectrum. The heterojunction layer was made by adding a p type semiconductor in the form of Cu2O on top of the TiO2 layer using the chemical bath deposition method and the SILAR technique to reduce the band gap and widen the light absorption spectrum. This research focuses on analyzing the effect of Cu2O layer thickness obtained from varying the number of CBD cycles of 10, 20, and 50, as well as annealing temperatures of 200 ºC, 250 ºC, and 300 ºC. Characterization of the heterojunction layer was carried out using XRD, SEM, cross-sectional SEM, and UV-Vis techniques. The XRD characterization results show Cu2O with low purity due to the appearance of CuO due to oxidation. SEM scanning showed Cu2O in the form of an octahedron at an annealing temperature of 200 ºC and a sharpened octahedron at annealing temperatures of 250 ºC and 300 ºC. UV-Visible analysis found that the band gap of TiO2 became smaller as the annealing temperature increased. The band gap also shows a smaller value as the number of cycles increases. However, some data shows an increase in the band gap due to the influence of the CuO fraction which is greater than the Cu2O fraction in the layer. Meanwhile, the direct band gap value of p-type semiconductors shows that the gap value tends to be close to the band gap value of compounds with a larger fraction. The best DSSC fabrication results were obtained by varying the annealing temperature of 250 ºC and the number of CBD cycles of 20 with the addition of graphite dopant with efficiency of 0,844%.
| Item Type: | Thesis (Other) |
|---|---|
| Uncontrolled Keywords: | annealing, chemical bath deposition, DSSC, SILAR, TiO2/Cu2O heterojunction |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK2960 Dye-sensitized solar cells. Solar batteries. Solar cells |
| Divisions: | Faculty of Industrial Technology and Systems Engineering (INDSYS) > Physics Engineering > 30201-(S1) Undergraduate Thesis |
| Depositing User: | Dhea Tirta Ananta |
| Date Deposited: | 01 Aug 2024 04:26 |
| Last Modified: | 12 Sep 2024 06:53 |
| URI: | http://repository.its.ac.id/id/eprint/109876 |
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