Syahputra, Hendy Gilang (2024) Studi Pengaruh Kontak Logam/Perovskite Pada Fotodetektor Berbasis 3D Halide Perovskite Dengan Struktur Metal-Semikonduktor-Metal. Masters thesis, Institut Teknologi Sepuluh Nopember.
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Abstract
Fotodetektor merupakan alat yang digunakan dalam mendeteksi dan menangkap cahaya melalui efek fotolistrik. Penelitian ini bertujuan untuk menganalisis kinerja MAPbI3 dengan masing-masing elektroda logam Al, Cr, dan Ni. Analisis lebih lanjut mengenai pattern size dan pemilihan substrat juga menjadi pembahasan pada penelitian ini. Prekursor perovskite yang terdiri dari 0,1590 gram metilamonium iodida (MAI) dan 0,4610 gram timbal (II) iodida (PbI2), ditimbang secara akurat dan disatukan dalam botol vial. Larutan homogen perovskite dicapai dengan mencampurkan 4 ml dimetilformamida (DMF) dan 1 ml dimetil sulfoksida (DMSO) melalui proses stirring pada 950 RPM selama 2 jam. Dalam membandingkan performa substrat, SiO2/Si dan glass dipilih sesuai dengan karakteristik yang dimiliki. Substrat dipaparkan pada alat sinar ultraviolet-ozon (UVO) selama 10 menit untuk meningkatkan kualitas wettability yang baik. MAPbI3 dideposisikan pada substrat dengan susunan bottom contact perovskite pada struktur metal-semiconductor-metal. Dihasilkan film MAPbI3 dengan ukuran grain yang berkisar pada 100-600 nm dengan absorbansi pada solid phase ~750 nm. Band gap yang dimiliki MAPbI3 menghasilkan valuasi 1.63 eV. XRD mengonfirmasi peak-peak yang dimiliki oleh MAPbI3 pada 2θ 13.5892°, 27.8373°, 23.8875°, 39.9208°, dan 39.9208°. Pada pengujian I-V, dihasilkan nilai dark current SiO2/Si terendah dengan pemakaian small pattern yakni aluminium dengan nilai 0,110 µA, sementara pada substrat glass dihasilkan aluminium pada large pattern senilai 0,040 µA. Hasil pada penelitian ini membuktikan teori Schottky barrier yang dihasilkan akibat kontak metal/perovskite bahwa dengan rendahnya work function yang dimiliki, maka semakin rendah nilai dark current yang dihasilkan. Glass substrate memiliki nilai dark current terendah dibandingkan dengan SiO2/Si. Pada substrat SiO2/Si, memperkecil ukuran pattern dapat memperkecil dark current yang dihasilkan.
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A photodetector is a device used to detect and capture light through the photoelectric effect. This research aims to analyze the performance of MAPbI3 with Al, Cr, and Ni metal electrodes, respectively. Further analysis regarding pattern size and substrate selection is also discussed in this research. The perovskite precursor, consisting of 0.1590 grams of methylammonium iodide (MAI) and 0.4610 grams of lead (II) iodide (PbI2), was weighed with great precision and combined in a vial. A homogeneous perovskite solution was achieved by mixing 4 ml of dimethylformamide (DMF) and 1 ml of dimethyl sulfoxide (DMSO) through a stirring process at 950 RPM for 2 hours. In order to compare substrate performance, SiO2/Si and glass were chosen according to their characteristics. The substrate was exposed to ultraviolet-ozone (UVO) light for 10 minutes in order to improve good wettability. The bottom contact perovskite deposition method was employed on a metal-semiconductor-metal structure. A MAPbI3 film was produced with a grain size ranging from 100 to 600 nm, with an absorbance in the solid phase of approximately 750 nm. The band gap of MAPbI3 was determined to be 1.63 eV. XRD confirmed the peaks of MAPbI¬3 at 2θ 13.5892°, 27.8373°, 23.8875°, 39.9208°, and 39.9208°. In the I-V test, the lowest SiO2/Si dark current value was produced using the small pattern, aluminum, with a value of 0.110 µA. In contrast, the glass substrate produced aluminum in the large pattern at 0.040 µA. These results support the Schottky barrier theory, which posits that a lower work function results in a lower dark current value. The glass substrate exhibited the lowest dark current value compared to the SiO2/Si substrate. It was observed that reducing the pattern size on the SiO2/Si substrate could result in a reduction in the dark current produced.
| Item Type: | Thesis (Masters) |
|---|---|
| Uncontrolled Keywords: | Dark current, MAPbI3, MSM Photodetector, Substrat kaca, Substrat SiO2/Si. |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7871.674 Detectors. Sensors |
| Divisions: | Faculty of Industrial Technology and Systems Engineering (INDSYS) > Material & Metallurgical Engineering > 27101-(S2) Master Thesis |
| Depositing User: | Hendy Gilang Syahputra |
| Date Deposited: | 13 Aug 2024 01:30 |
| Last Modified: | 13 Aug 2024 01:30 |
| URI: | http://repository.its.ac.id/id/eprint/113133 |
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