Pengaruh Temperatur Annealing terhadap Hasil Fabrikasi Film Tipis MoS₂/ITO menggunakan Metode Deposisi DC dan RF Magnetron Sputtering untuk Aplikasi Termoelektrik

Rahmawati, Rizka Viviana Dwi (2026) Pengaruh Temperatur Annealing terhadap Hasil Fabrikasi Film Tipis MoS₂/ITO menggunakan Metode Deposisi DC dan RF Magnetron Sputtering untuk Aplikasi Termoelektrik. Other thesis, Institut Teknologi Sepuluh Nopember.

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Abstract

Termoelektrik merupakan salah satu teknologi yang mampu mengonversi gradien temperatur menjadi energi listrik melalui efek Seebeck. Teknologi termoelektrik terus dikembangkan sebagai solusi dalam memenuhi kebutuhan energi listrik di berbagai sektor. Pada penelitian ini, film tipis MoS₂/ITO difabrikasi sebagai kandidat material termoelektrik dengan tujuan untuk menumbuhkan film tipis menggunakan metode magnetron sputtering, untuk mengetahui pengaruh temperatur annealing terhadap karakteristik morfologi, komposisi, dan struktur kristal, serta untuk mengidentifikasi potensi kombinasi material MoS₂/ITO sebagai kandidat material termoelektrik menggunakan ZEM-3. Struktur MoS₂/ITO difabrikasi dengan metode sputtering berbasis Physical Vapor Deposition (PVD) di atas substrat SiO₂ selama 30 menit. Kemudian diberi perlakuan annealing temperatur 550 °C, 600 °C, dan 650 °C. Saat dilakukan uji karakterisasi FE-SEM, menunjukkan bahwa film tipis memiliki morfologi permukaan yang homogen dengan butiran berukuran nano tanpa adanya retakan. Sedangkan hasil EDX mengonfirmasi distribusi unsur Mo, S, In, dan O yang merata. Kemudian untuk hasil XRD memperlihatkan bahwa peningkatan temperatur annealing menyebabkan peningkatan intensitas puncak yang mengindikasikan peningkatan kristalinitas. Secara sifat termoelektrik, MoS₂/ITO menunjukkan performa optimum yang diperoleh pada film tipis dengan annealing 550 °C. Pada temperatur pengujian 474 K, film tipis tersebut memiliki nilai resistivitas sebesar 3,26 × 10⁻⁵ Ω·m, koefisien Seebeck −5,33 × 10³ μV/K, serta power factor sebesar 8,72 × 10³ μW/m·K². Hasil ini menunjukkan bahwa sifat listrik pada film tipis MoS₂/ITO berpotensi diaplikasikan sebagai material termoelektrik.
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Thermoelectricity is one of the technologies capable of converting a temperature gradient into electrical energy through the Seebeck effect. The development of this technology has been increasingly encouraged to meet the demand for electrical energy in various sectors. In this study, MoS₂/ITO thin films were fabricated as candidate thermoelectric materials with the objectives of growing thin films using the magnetron sputtering method, investigating the effect of annealing temperature on morphological, compositional, and crystalline structural characteristics, and identifying the potential of the MoS₂/ITO material combination as a candidate thermoelectric material using ZEM-3. The MoS₂/ITO structure was fabricated using a Physical Vapor Deposition (PVD)-based sputtering method on a SiO₂ substrate for 30 minutes. It was then subjected to annealing treatments at temperatures of 550 °C, 600 °C, and 650 °C. When FE-SEM characterization was conducted, it showed that the thin film exhibited a homogeneous surface morphology with nanoscale grains without the presence of cracks. Meanwhile, the EDX results confirmed a uniform distribution of Mau, S, In, and O elements. Furthermore, the XRD results showed that an increase in annealing temperature caused an increase in peak intensity, indicating enhanced crystallinity. In terms of thermoelectric properties, MoS₂/ITO exhibited optimum performance obtained for thin films annealed at a temperature of 550 °C. At a measurement temperature of 474 K, the thin film showed a resistivity of 3.26 × 10⁻⁵ Ω·m, a Seebeck coefficient of −5.33 × 10³ μV/K, and a power factor of 8.72 × 10³ μW/m·K². These results indicate that the electrical properties of MoS₂/ITO thin films have the potential to be applied as thermoelectric materials.

Item Type:	Thesis (Other)
Uncontrolled Keywords:	Koefisien Seebeck, MoS₂/ITO, Physical Vapor Deposition (PVD), Power Factor, Resistivitas.Physical Vapor Deposition (PVD), Power Factor, Resistivity, Seebeck Coefficient.
Subjects:	Q Science > QC Physics > QC 611.97.T46 Temperature effects. Including transition temperature
Divisions:	Faculty of Science and Data Analytics (SCIENTICS) > Physics > 45201-(S1) Undergraduate Thesis
Depositing User:	Rizka Viviana Dwi Rahmawati
Date Deposited:	02 Feb 2026 05:58
Last Modified:	02 Feb 2026 05:58
URI:	http://repository.its.ac.id/id/eprint/131188

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