Characterization Of Uniaxial Bending Strength On The Integrated Circuit Surface Of Dram Chips

Hadi, Fabian Thariq El (2026) Characterization Of Uniaxial Bending Strength On The Integrated Circuit Surface Of Dram Chips. Other thesis, Institut Teknologi Sepuluh Nopember.

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Abstract

Pesatnya perkembangan High-Bandwidth Memory (HBM) dan pengemasan tiga dimensi tingkat lanjut telah meningkatkan kebutuhan akan cip DRAM ultra-tipis yang memiliki kekuatan mekanis andal selama proses manufaktur dan perakitan, di mana penipisan wafer yang agresif menyebabkan die sangat sensitif terhadap tegangan lentur dan patah prematur. Penelitian ini mengkarakterisasi kekuatan lentur uniaaksial pada permukaan active integrated circuit (IC) dari cip DRAM DDR3 setebal 115 μ"m" dengan mengevaluasi dua metode pengujian mekanis: uji three-point bending (3PB) konvensional dan uji Load-on-Elastic-Foundation (LoEF). Hasil eksperimen menunjukkan bahwa sisi IC aktif mempertahankan kekuatan lentur yang sangat stabil dan konsisten sebesar kurang lebih 335–337 MPa di kedua metode pengujian (335,0 MPa pada uji 3PB dan 337,3 MPa pada uji LoEF), yang membuktikan bahwa permukaan IC memiliki kualitas permukaan yang murni, distribusi cacat mikro yang seragam, dan perilaku patahan yang dapat diprediksi di sepanjang garis pembebanan pusat. Analisis distribusi Weibull semakin mempertegas keandalan struktural yang tinggi dari permukaan IC aktif, yang menghasilkan garis kemiringan yang curam (modulus Weibull sebesar 9,16–11,47) dan kekuatan karakteristik yang seragam dalam rentang 348–358 MPa. Selain itu, nilai modulus Young efektif yang terukur dari cip DRAM adalah sekitar 55 GPa, di mana nilai ini secara signifikan lebih rendah dibandingkan silikon murni (169 GPa), yang mengonfirmasi perilaku struktural komposit akibat integrasi fungsional interkoneksi logam dan lapisan dielektrik. Secara keseluruhan, penelitian ini berhasil menetapkan ambang batas mekanis intrinsik dan dasar keandalan dari permukaan IC aktif untuk aplikasi pengemasan memori tipis tingkat lanjut.
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The rapid development of high-bandwidth memory (HBM) and advanced three-dimensional packaging has increased the demand for ultra-thin DRAM chips with reliable mechanical strength during manufacturing and assembly, where aggressive wafer thinning renders dies highly sensitive to bending stress and premature fracture. This study characterizes the uniaxial bending strength on the active integrated circuit (IC) surface of 115 μ"m" -thick DDR3 DRAM chips by evaluating two mechanical testing methods: the conventional three-point bending (3PB) test and the Load-on-Elastic-Foundation (LoEF) test. The experimental results show that the active IC side maintains a highly stable and consistent bending strength of approximately 335–337 MPa across both test methods (335.0 MPa under 3PB testing and 337.3 MPa under LoEF testing), demonstrating that the IC surface possesses pristine surface quality, uniform micro-defect distribution, and predictable fracture behavior along the central loading line. Weibull distribution analysis further confirms the high structural reliability of the active IC surface, yielding a steep slope (Weibull modulus of 9.16–11.47) and a uniform characteristic strength in the range of 348–358 MPa. Additionally, the measured effective Young's modulus of the DRAM chip is approximately 55 GPa, which is significantly lower than bare silicon (169 GPa), confirming its composite structural behavior due to the integration of functional metal interconnects and dielectric layers. Overall, this study successfully establishes the intrinsic mechanical threshold and reliability baselines of the active IC surface for advanced thin memory packaging applications.

Item Type:	Thesis (Other)
Uncontrolled Keywords:	Ultra-thin DRAM chip, Uniaxial bending strength, Active IC surface, Three-point bending test, Load-on-Elastic-Foundation test, Weibull analysis, Chip DRAM ultra-tipis, Kekuatan lentur uniaaksial, Permukaan IC aktif, Uji three-point bending, Uji Load-on-Elastic-Foundation, Analisis Weibull
Subjects:	T Technology > TJ Mechanical engineering and machinery
Divisions:	Faculty of Industrial Technology and Systems Engineering (INDSYS) > Mechanical Engineering > 21201-(S1) Undergraduate Thesis
Depositing User:	Fabian Thariq El Hadi
Date Deposited:	03 Aug 2026 01:13
Last Modified:	03 Aug 2026 01:13
URI:	http://repository.its.ac.id/id/eprint/141526

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