Efek Penambahan Gas Ch4 Dan H2 Pada Penumbuhan Lapisan Tipis Silikon Amorf Tipe-P Dengan Plasma Enhanced Chemical Vapor Deposition (PECVD)

Sholehah, Ayunis (2017) Efek Penambahan Gas Ch4 Dan H2 Pada Penumbuhan Lapisan Tipis Silikon Amorf Tipe-P Dengan Plasma Enhanced Chemical Vapor Deposition (PECVD). Undergraduate thesis, Institut Teknologi Sepuluh Nopember.

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Abstract

Penelitian Tugas akhir ini bertujuan untuk mengetahui laju gas hidrogen (H2) dan laju gas Silan (SiH4) pada kualitas film tipis silikon amorf (a-Si) tipe p. Penumbuhan lapisan tipe-p dibuat di atas kaca ITO berukuran 10 x 10 cm2 pada daya RF 5 watt, tekanan chamber 480 mTorr, suhu substrat 210oC, laju gas silan (SiH4) 20 sccm, laju gas Boron (B2H6) 2 sccm dan waktu deposisi 15 menit menggunakan sistem Plasma Enhanced Chemical Vapor Deposition (PECVD). Proses pendopingan lapisan tipis dilakukan dengan mangalirkan gas Boron (B2H6) ke dalam campuran gas silan (SiH4) , gas metan (CH4) dan hidrogen (H2). Semakin besar laju gas Hidrogen maka konduktivitas listrik dan Energi Gap akan semakin besar. Namun, sebaliknya ketebalan lapisan akan semakin kecil. Semakin besar laju gas Metan maka konduktivitas listrik dan Energi Gap akan semakin besar. Namun, sebaliknya ketebalan lapisan akan semakin kecil. Pada pemberian gas Hidrogen 60sccm nilai konduktivitas terjadi penurunan kembali yaitu sebesar 5602 (S/cm), diduga pada laju hidrogen tinggi cacat mulai terbentuk kembali. =========================================================================================== The objective of this final project research is to study the effect of flow rate of hydrogen gas (H2.) and silane gas (SiH4) on the quality of the p-type amorphous silicon. Growth of p-type layer was conducted on the 10 x 10 cm¬2 ITO glass applying RF power of 5 watts, and pressure of 480 mTorr. At substrate temperature of 210°C, the rate of silane gas (SiH4) 20 sccm and the deposition time 15 minutes were set for deposition using the system Plasma Enhanced Chemical Vapor Deposition (PECVD). Doping process was done by flowing diboron gas (B2H6) into the mixture of silane gas (SiH4), methane (CH4) and hydrogen (H2). The bigger flow rate value of hydrogen gas has led to higher the electrical conductivity and energy gap. Contrarily, the layer thickness gets smaller. The increased rate of methane causes higher electrical conductivity and energy gap. Meanwhile, dilution with 60 sccm hydrogen gas has induced the decreased electrical conductivity down to 5602 S/cm, implying that the high flow rate of hydrogen increases the defects.

Item Type: Thesis (Undergraduate)
Uncontrolled Keywords: Energi Gap, Konduktivitas, Ketebalan
Subjects: Q Science
Q Science > QC Physics
Divisions: Faculty of Mathematics and Science > Physics > (S1) Undergraduate Theses
Depositing User: - AYUNIS SHOLEHAH
Date Deposited: 10 Apr 2017 08:32
Last Modified: 10 Apr 2017 08:38
URI: http://repository.its.ac.id/id/eprint/3513

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