Pengaruh Waktu Deposisi Dan Tekanan Gas Argon Proses Physical Vapour Deposition (PVD) Pada Lapisan Tipis Ag-Cu Untuk Aplikasi Sifat Antimicrobial Pada Orthopedic Device

Hermastuti, Ratna (2017) Pengaruh Waktu Deposisi Dan Tekanan Gas Argon Proses Physical Vapour Deposition (PVD) Pada Lapisan Tipis Ag-Cu Untuk Aplikasi Sifat Antimicrobial Pada Orthopedic Device. Undergraduate thesis, Institut Teknologi Sepuluh Nopember.

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Abstract

Implan metalik merupakan komponen penting pada pengobatan biomedis. Namun, seringkali terjadi infeksi pasca operasi pemasangan implan. Infeksi pada pemasangan sendi biasanya dicegah dengan mengkonsumsi antibiotik dengan menjaga peralatan bedah dan implan tetap dalam keadaan steril. Namun hal tersebut belum maksimal jika material yang digunakan masih menjadi daya tarik bagi bakteri. Dari sisi keilmuan material dikembangkan jenis material yang memiliki sifat antibakteri atau disebut juga antimicrobial material. Perak (Ag) dan Tembaga (Cu) memiliki sifat antimicrobial untuk mencegah infeksi pada implan tulang. Penelitian tugas akhir ini bertujuan untuk menganalisa pengaruh waktu deposisi dan tekanan gas argon pada proses deposisi lapisan tipis AgCu sebagai material antimicrobial dengan metode Physical Vapor Deposition (PVD) RF Sputtering. Parameter yang digunakan waktu deposisi sebesar 10, 15 dan 20 menit dan tekanan gas Argon sebesar 3 x 〖10〗^(-2) mBar, 4 x 〖10〗^(-2) mBar, dan 5 x 〖10〗^(-2) mBar. Hasil dari deposisi lapisan tipis Ag-Cu dikarakterisasi menggunakan SEM-EDX untuk menganalisa morfologi dan persebaran Ag dan Cu yang mana didapatkan semakin lama waktu deposisi semakin meningkatkan kuaitas lapisan tipis Ag-Cu ditandai dengan incomplete lapisan Ag-Cu semakin sedikit. Selanjutnya analisa XRD pada sampel lapisan tipis Ag-Cu ditemukan peak yang luas (broad) yang menunjukkan terbentuknya FCC metalic silver, Ag dan terdapat peak Cu. Uji kekasaran menggunakan AFM menunjukkan bahwa dengan meningkatnya tekanan gas Argon menurunkan laju deposisi proses PVD sehingga jumlah partikel yang terdeposisi sedikit dan tingkat kekasarannya meningkat. Dari hasil indentasi dengan Rockwell-C didapatkan hasil adhesi lapisan tipis Ag-Cu pada sampel lemah dan tidak diterima berdasarkan kualifikasi teknis. Dari hasil pengujian Disk Diffusion Test didapatkan area inhibisi microbial pada sampel lapisan tipis Ag-Cu. kemampuan antimicrobial pada sampel dipengaruhi oleh keberadaan ion antimicrobial seperti Ag+ dan Cu2+. ======================================================================================================================== Metallic implants are important components in biomedical treatment. However, oftentimes postoperative infection ensues after installation of implant. Infections on joints installation are usually treated by antibiotics, but it is still not optimal. Prevention has been undergone by keeping the surgical instruments and implants in a sterile condition. Nevertheless, this action is not optimal if the utilized material still can attract the bacteria. From material science’s side, it is developed a type of material which has antibacterial properties or called as antimicrobial material. Silver (Ag) and Copper (Cu) have antimicrobial properties to prevent infection in bone implants. This research analyzed the influence of deposition time and pressure of argon gas on Ag-Cu thin film deposition process as antimicrobial material with Physical Vapor Deposition (PVD) RF Sputtering method. Parameter which is used were time with amount of 10, 15 and 20 minutes and Argon gas pressure with amount of 3 x 10−2 mBar, 4 x 10−2 mBar, and 5 x 10−2 mBar. The results of Ag-Cu thin film deposition was characterized using SEM-EDX to analyze morphology of thin film and the dissemination of Ag and Cu atoms. The result that rise of deposition time will increase the quality of the thin films that the incomplete of film doesn’t occur. Furthermore, from XRD analysis on Ag-Cu thin film sample, it was found broad peak which indicated the formation of FCC metallic silver, Ag and also there were Cu peak. The roughness test using AFM demonstrated that a rise in Argon gas pressure will cause a reduction in the PVD process deposition rate so that the number of particles would be smaller and the roughness increased. From indentation test using Rockwell-C, it is obtained that adhesion result of Ag-Cu thin layer is weak and it is not acceptable according to technical qualification. An antimicrobial assay was then performed using the Disk Difusion Test method where there was a microbial inhibition area on the Ag-Cu thin film sample. The antimicrobial ability of the sample is influenced by the presence of antimicrobial ions such as Ag+ and Cu2+.

Item Type: Thesis (Undergraduate)
Uncontrolled Keywords: Keyword: Implant, Antimicrobial, Lapisan tipis (Thin Film), Physical Vapor Deposition (PVD)
Subjects: R Medicine > RZ Other systems of medicine
Divisions: Faculty of Industrial Technology > Material & Metallurgical Engineering > 28201-(S1) Undergraduate Thesis
Depositing User: Ratna Hermastuti .
Date Deposited: 12 Sep 2017 08:34
Last Modified: 06 Mar 2019 02:12
URI: http://repository.its.ac.id/id/eprint/43247

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