Andrameda, Yurian Ariandi (2018) Analisa Pengaruh Doping Borong Terhadap Sifat Kapasitif Material Graphene Untuk Aplikasi Superkapasitor. Undergraduate thesis, Institut Teknologi Sepuluh Nopember.
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Abstract
Media penyimpanan energi listrik merupakan salah satu material yang perlu dikembangkan di era ini. Salah satu media penyimpanan listrik adalah electric double layer capasitor (EDLC). Graphene adalah material karbon berlapis tunggal yang memiliki sifat-sifat unggul dalam aplikasi EDLC karena konduktifitas listrik dan luas permukaan aktif yang tinggi. Pendopingan graphene dengan boron diharapkan mampu meningkatkan konduktifitas listrik dengan mekanisme penambahan jumlah hole, sehingga penelitian ini bertujuan untuk mengetahui pengaruh pendopingan boron pada graphene terhadap sifat kelistrikannya dan struktur graphene. Metode hummer yang dimodifikasi diikuti dengan proses hydrothermal digunakan untuk mensintesis reduced graphene oxide (rGO). Penelitian ini menggunakan larutan asam borik H3BO3 1M sebagai media pendoping arom boron dengan variasi penambahan 1 ml, 2 ml, 3 ml. Material yang disintesis dikarakterisasi dengan menggunakan XRD, SEM-EDX, FTIR, FPP, dan CV. Sifat kapasitif elektroda diukur dengan melakukan uji CV dengan rentang scan rate 5, 10, 50 dan 100 mV/s. Hasil Penelitian ini menunjukan bahwa doping boron berhasil meningkatkan kapasitansi spesifik dari 164.2 F/g sebelum didoping menjadi 192.5 F/g setelah didoping boron 4.37 at% dengan larutan Na2SO4 1M. ======================================================================================================
Electrical energy storages are one of the material needed to developed in order to increase their efficiency right now. One of the electrical energy storages are electrical double layer capasitor (EDLC). Graphene is carbon material with single layer which is it has superior properties for EDLC application, this is because good electrical conductivity and active surface area. Boron doped graphene expected can increase a electrical properties with mechanism of hole enhancement, so the purposes of this researce are find out an effect of boron doping in graphene against electrical properties and graphene structure. Modification Hummer’s Method followed by hydrothermal process are used for reduced graphene oxide (rGO) synthesis. This research used boric acid H3BO3 Solution 1M with variation 1ml, 2 ml, and 3 ml as source of boron atoms. The properties, Sampel of graphite, GO, rGO, B-rGO are characterized using XRD, SEM-EDX, FTIR, FPP, and CV. The capacitive properties of electrodes are measured by Cyclic voltammetry (CV) test with a scan rate range of 5, 10, 50 and 100 mV / s. From the results that show if boron doping can increase specific capacitance of reduced graphene oxide from 164.2 F/g to 192.5 F/g after borong doping with 4.37 at% using Na2SO4 1M solution.
| Item Type: | Thesis (Undergraduate) |
|---|---|
| Additional Information: | RSMt 620.118 And a-1 3100018074209 |
| Uncontrolled Keywords: | Graphene; rGO; Superkapasitor; EDLC; Doping; Boron; Kapasitansi; Graphene; rGO; Supercapacitor; EDLC; Doping; Boron; Capacitance |
| Subjects: | Q Science > QC Physics > QC173.4.C63 Composite materials Q Science > QD Chemistry T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TP Chemical technology > TP255 Electrochemistry, Industrial. |
| Divisions: | Faculty of Industrial Technology > Material & Metallurgical Engineering > 28201-(S1) Undergraduate Thesis |
| Depositing User: | Andrameda Yurian Ariandi |
| Date Deposited: | 19 Feb 2018 02:19 |
| Last Modified: | 20 Apr 2020 20:06 |
| URI: | http://repository.its.ac.id/id/eprint/49219 |
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