STUDI PENGARUH ANIL PADA SIFAT SILIKON AMORF TERHIDROGENASI (A-Si:H) YANG DITUMBUHKAN DENGAN METODE PECVD

MUTTAQIN, FUAD DARUL (2015) STUDI PENGARUH ANIL PADA SIFAT SILIKON AMORF TERHIDROGENASI (A-Si:H) YANG DITUMBUHKAN DENGAN METODE PECVD. In: JURNAL TEKNIK POMITS 1-7, Physics.

[thumbnail of 1110100051-paperpdf.pdf]
Preview
Text
1110100051-paperpdf.pdf - Published Version

Download (1MB) | Preview
[thumbnail of 1110100051-presentationpdf.pdf]
Preview
Text
1110100051-presentationpdf.pdf - Published Version

Download (1MB) | Preview
Item Type: Conference or Workshop Item (Paper)
Additional Information: RSFi 553.6 Mut s
Uncontrolled Keywords: a-Si:H, solar cell, PECVD, anneal
Subjects: Q Science > QC Physics
Divisions: Faculty of Mathematics and Science > Physics > 45201-(S1) Undergraduate Thesis
Depositing User: Anis Wulandari
Date Deposited: 21 Jun 2016 13:40
Last Modified: 24 Aug 2018 03:43
URI: http://repository.its.ac.id/id/eprint/501

Actions (login required)

View Item View Item