Maslakah, Umi (2015) Analisis Lebar Celah Pita Energi Dan Ikatan Molekul Lapisan Tipis a-Si:H Yang Ditumbuhkan Dengan Metode PECVD. Undergraduate thesis, Institut Teknologi Sepuluh Nopember.
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Abstract
Penelitian terkait analisis lebar celah pita energi dan
ikatan molekul lapisan tipis a-Si:H yang ditumbuhkan dengan
metode PECVD telah dilakukan. Penelitian ini menggunakan
variasi temperatur chamber PECVD saat penumbuhan lapisan
tipis, yaitu pada 150oC, 200oC, dan 250oC. Karakterisasi
dilakukan dengan menggunakan pengujian XRD, AFM, FTIR dan
Spektrofotometri UV-Vis. Hasil analisis sampel secara
keseluruhan menunjukkan lapisan tipis yang terbentuk yaitu SiH
dengan struktur amorf (a-Si:H). Nilai lebar celah pita energi dari
sampel lapisan tipis a-Si:H berkisar antara 1.03 eV – 1.89 eV
yang termasuk dalam rentang bahan semikonduktor, sebagai
hasil variasi temperatur deposisi.
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Analysis on energy band gap and molecular bonding of
hidrogenated amorphous silicon (a-Si:H) thin films deposited by
Plasma Enhanced Chemical Vapour Deposition (PECVD) have
been carried out. The a-Si:H films have been grown in various
chamber temperatur of 150oC, 200oC, and 250oC.
Characterization using XRD, AFM, FTIR and UV-Vis
Spectrophotometry were then conducted for the deposited films.
All thin film samples exhibited to be SiH state with the
amorphous structure, having energy band gap in the range of
1.03 eV – 1.89 eV. These films are as semiconducting materials
with controlled band gap, as result of varying deposition
temperatur.
| Item Type: | Thesis (Undergraduate) |
|---|---|
| Additional Information: | RSFi 530.41 Mas a |
| Uncontrolled Keywords: | ikatan molekul, lebar celah pita energi, PECVD, silikon amorf terhidrogenasi. |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Mathematics and Science > Physics > 45201-(S1) Undergraduate Thesis |
| Depositing User: | Mr. Tondo Indra Nyata |
| Date Deposited: | 17 May 2018 03:01 |
| Last Modified: | 17 May 2018 03:01 |
| URI: | http://repository.its.ac.id/id/eprint/51894 |
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