Fabrikasi Film Karbon Amorf Dari Biomassa Untuk Aplikasi Sel Fotovoltaik

Priyanto, Budhi (2021) Fabrikasi Film Karbon Amorf Dari Biomassa Untuk Aplikasi Sel Fotovoltaik. Doctoral thesis, Institut Teknologi Sepuluh Nopember.

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Abstract

Telah berhasil dibuat lapisan tipis karbon amorf (a-C), karbon amorf doping boron (a-C:B) dan karbon amorf doping nitrogen (a-C:N) dengan sumber gula siwalan cair menggunakan metode spin coating dan nanospray. Lapisan tipis yang dibuat dengan metode nanospray mempunyai permukaan yang merata, ukuran partikel lebih kecil, halus, lebih tipis dengan ketebalan ~100 nm. Nilai konduktivitas listrik berada dalam rentang (52 – 61) S/m dengan celah energi 1,7 eV dan berada dalam kategori bahan semikonduktor. Lapisan tipis karbon amorf menunjukkan sifat transparan pada panjang gelombang 900 nm, nilai transmitansi menurun dengan adanya doping boron dan nitrogen. Hasil pengujian syn. PES menunjukkan proses doping berhasil dengan baik. doping boron berhasil membentuk semikonduktor menjadi tipe p, doping nitrogen membentuk semikonduktor tipe n dan tanpa doping sebagai semikonduktor intrinsik i. Kurva i-v sampel sambungan i-n (a-C/a-C:N), i-p (a-C/a-C:B) dan p-n (a-C:B/a-C:N) memperlihatkan sifat sebagai penyearah. Sampel sambungan p-i-n (a-C:B/a-C/a-C:N) dan ketiga sampel sambungan lainnya meningkat nilai arus dan tegangannya saat diiradiasi dengan cahaya. Karakteristik kurva i-v semua sampel sambungan saat diiradiasi dengan cahaya tampak menunjukkan karakteristik fotovoltaik, memberi bukti sampel adalah sel surya. Efisiensi maksimum sampel tertinggi sebagai sel surya didapatkan pada sambungan p-i-n (a-C:B/a-C/a-C:N) dengan nilai 0,0037198 %.
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Thin layer of amorphous carbon (a-C), boron-doped amorphous carbon (a-C:B), and
nitrogen-doped amorphous carbon (a-C:N) has been successfully made with liquid
palmyra sugar as source using spin coting and nanospray. The thin layer made by
nanospray method has homogeous surface, the particle size is smaller, smother,
thinner with a thickness of ~ 100 nm. Electrical conductivity values are in the range
(52-61) S/m with an energy gap of 1,7 eV and are in the category of semiconductor
materials. Amorphous carbon thin film shows transparent properties at a wavelenght
of 900 nm, the transmittance value decrease with the presence of boron and nitrogen
doping. Characterization using synchrotron photoemission spectroscopy (PES)
shows that the doping process works well. Boron-doped sample has induced the
semiconductor into p-type, while nitrogen doped an n-type semiconductor. The I-V
curve of the i-n (a-C/a-C:N), i-p(a-C/a-C:B) and p-n (a-C:B/a-C:N) junction show
the properties of rectifier. The p-i-n junction sample (a-C:B/a-C/a-C:N) and other
three junction samples increased their current and voltage values when irradiated with
light. The characteristic i-v curve of all junction samples when irradiated with visible
light showed photovoltaic characteristics, providing evidence that the samples are
potential for application as solar cells. The maximum efficiency of the highest sample
as a solar cell was obtained at p-i-n junction (a-C:B/a-C/a-C:N) with a value of
0.003719%.

Item Type: Thesis (Doctoral)
Uncontrolled Keywords: carbon amof film, siwalan
Subjects: Q Science > QC Physics
Q Science > QC Physics > QC765 Magnetic materials
Divisions: Faculty of Science and Data Analytics (SCIENTICS) > Physics > 45001-(S3) PhD Thesis
Depositing User: Budhi Priyanto
Date Deposited: 17 Feb 2022 04:37
Last Modified: 17 Feb 2022 04:37
URI: http://repository.its.ac.id/id/eprint/94411

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