Penumbuhan Lapisan Tipis Silikon Amorf Terhidrogenasi (A-Si:H) Tipe-N Dengan Pengenceran H2 Menggunakan Plasma Enhanced Chemical Vapor Deposition (Pecvd)

Murti, Cahyaning Fajar Kresna (2017) Penumbuhan Lapisan Tipis Silikon Amorf Terhidrogenasi (A-Si:H) Tipe-N Dengan Pengenceran H2 Menggunakan Plasma Enhanced Chemical Vapor Deposition (Pecvd). Undergraduate thesis, Institut Teknologi Sepuluh Nopember.

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Abstract

Lapisan tipis silikon amorf terhidrogenasi (a-Si:H) tipe-n telah dibuat di atas kaca ITO berukuran 10 x 10 cm2 pada daya 5 Watt, tekanan chamber 530 mTorr dan suhu substrat 270˚C menggunakan sistem Plasma Enhanced Chemical Vapor Deposition (PECVD). Proses pendopingan tipe-n dilakukan dengan mengalirkan gas fosfin (PH3) ke dalam campuran gas silan (SiH4) dan hidrogen (H2). Variasi laju gas hidrogen digunakan untuk mengetahui pengaruhnya terhadap tebal, lebar celah pita energi, dan konduktivitas listrik lapisan, dimana masing-masing dikarakterisasi menggunakan AFM, spektrometer UV-Vis, dan metode empat titik. Sementara itu, ikatan molekuler lapisan dikarakterisasi menggunakan FTIR. Ketebalan lapisan a-Si:H tipe-n menurun seiring dengan meningkatnya laju gas H2 dalam rentang 0-40 sccm. Bermacam-macam laju gas H2 juga berimbas pada perubahan celah pita energi dan konduktivitas listrik lapisan a-Si:H tipe-n. ============================================================================================== Thin layers of n-type hydrogenated amorphous silicon (a-Si:H) has been made on ITO glass measuring 10 x 10 cm2 applying power of 5 watt, chamber pressure of 530 mTorr and a substrate with temperature of 270oC using a system of Plasma Enhanced Chemical Vapor Deposition (PECVD). N-type doping process was carried out by flowing phosphine (PH3) gas into the mixture of silane (SiH4) and hydrogen (H2) gases. The various rate of hydrogen gas was used to determine its effect on the thickness, bandgap, and electrical conductivity of the films, which were characterized respectively using AFM, UV-Vis spectrometer, and a four-point probe method. Meanwhile, molecular bonding in the film was characterized using FTIR. The thickness of n-type a-Si:H film decreases with the increasing rate of H2 in the range of 0-40 sccm. The varying rate of H2 has also induced the change in bandgap and electrical conductivity of the films.

Item Type: Thesis (Undergraduate)
Uncontrolled Keywords: a-Si:H tipe-n, Energi Gap, Tebal, Konduktivitas Listrik, PECVD.
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Divisions: Faculty of Mathematics and Science > Physics > 45201-(S1) Undergraduate Thesis
Depositing User: - CAHYANING CAHYANING FAJAR KRESNA MURTI
Date Deposited: 08 May 2017 04:22
Last Modified: 08 Mar 2019 07:00
URI: https://repository.its.ac.id/id/eprint/3701

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