Simulasi Sel Surya Perovskite Dengan Penambahan Double Layer CsI-Perovskite

Rachmadhana, Iqbal Donni (2021) Simulasi Sel Surya Perovskite Dengan Penambahan Double Layer CsI-Perovskite. Undergraduate thesis, Institut Teknologi Sepuluh Nopember.

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Abstract

Sel surya sangat banyak menarik perhatian peneliti untuk terus meningkatkan efisiensi dan stabilitas pada pembuatannya untuk dapat memasok kebutuhan energi yang semakin tinggi. Salah satu material yang dapat menghasilkan efisiensi dan stabilitas tinggi adalah material perovskite. Material perovskite merupakan material semikonduktor yang dapat menghasilkan efisiensi dan stabilitas yang tinggi dengan biaya fabrikasi yang relatif rendah. Metode penambahan double layer pada sel surya perovskite dilakukan untuk dapat meningkatkan efisiensi dan stabilitas yang dengan menggunakan penambahan lapisan CsI pada permukaan perovskite aktif sel surya perovskite. Penambahan double layer CsI optimum pada atas-bawah, atas dan bawah lapisan perovskite. Penambahan lapisan CsI pada perovskite aktif berpengaruh pada peningkatan ukuran grain pada struktur kristal lapisan perovskite yang mana hal ini memudahnya proses eksitasi muatan pada material perovskite. Sehingga dari penelitian tersebut dibuatkan simulasi tentang double layer CsI-Perovskite pada sel surya perovskite dengan menggunakan simulasi fotovoltaik dengan software General-purpose Photovoltaic Device Model (GPVDM). Simulasi yang dilakukan menghasilkan nilai Power Conversion Efficiency (PCE) tertinggi pada penambahan double layer CsI/Perovskite/CsI dengan nilai efisiensi sebesar 18,04% yang mana hasil simulasi ini mendekati hasil yang dapatkan pada proses fabrikasi double layer CsI - Perovskite sel surya. ===================================================================================================== Solar cells are very much attracting the attention of researchers to continue to improve efficiency and stability in their manufacture to be able to supply increasingly higher energy needs. One of the materials that can produce high efficiency and stability is perovskite material. Perovskite material is a semiconductor material that can produce high efficiency and stability with relatively low fabrication costs. The method of adding a double layer to perovskite solar cells is carried out to increase efficiency and stability by using the addition of a CsI layer on the perovskite surface of active perovskite solar cells. The value of the addition of the CsI double layer is optimum at the top - bottom, top and bottom of the perovskite layer. The addition of a CsI layer on the active perovskite has an effect on increasing the grain size of the crystal structure of the perovskite layer which makes it easier for the charge excitation process on the perovskite material. So from this research, a simulation of the CsI-Perovskite double layer on perovskite solar cells was made using photovoltaic simulation with General-purpose Photovoltaic Device Model (GPVDM) software. The simulations carried out resulted in the highest Power Conversion Efficiency (PCE) value in the addition of a CsI/Perovskite/CsI double layer with an efficiency value of 18.04% which is close to the results obtained in the double layer CsI - Perovskite solar cell fabrication process.

Item Type: Thesis (Undergraduate)
Uncontrolled Keywords: efficiency, double layer, perovskite solar cell, semiconductor, simulation, efisiensi, double layer, sel surya perovskite, semikonduktor, simulasi.
Subjects: Q Science > QC Physics > QC100 Crystals.
Q Science > QC Physics > QC162 Adsorption and absorption
Q Science > QC Physics > QC20.7.F67 Fourier transformations
Q Science > QC Physics > QC610.3 Electric conductivity
T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK2960 Dye-sensitized solar cells. Solar batteries. Solar cells
Divisions: Faculty of Science and Data Analytics (SCIENTICS) > Physics > 45201-(S1) Undergraduate Thesis
Depositing User: Iqbal Donny Rachmadhana
Date Deposited: 11 Aug 2021 03:10
Last Modified: 11 Aug 2021 03:10
URI: https://repository.its.ac.id/id/eprint/85365

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