Pengaruh Penambahan Boron dan Nitrogen pada Struktur dan Morfologi Grafena Oksida Tereduksi

Maulida, Pramitha Yuniar Diah (2021) Pengaruh Penambahan Boron dan Nitrogen pada Struktur dan Morfologi Grafena Oksida Tereduksi. Undergraduate thesis, Institut Teknologi Sepuluh Nopember.

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Abstract

Grafena oksida tereduksi (rGO) merupakan material dengan struktur yang mirip dengan grafena, namun dengan adanya beberapa cacat pada struktur. Sebagai material karbon aktif turunan dari grafena, rGO memiliki banyak penerapan. Salah satu penerapan dari rGO adalah sebagai bahan baku pembuatan semikonduktor. Semikonduktor tipe-p dan n dari rGO masing- masing dapat dihasilkan dari penambahan boron (B) dan nitrogen (N). Penelitian ini bertujuan untuk menganalisis struktur dan morfologi dari rGO yang diberi doping B dan N. Pengujian yang dilakukan dalam penelitian ini meliputi X-Ray Diffraction (XRD), Fourier Transform Infrared (FTIR), Scanning Electron Microscope/ Energy Dispersive X-Ray (SEM/EDX), Particle Size Analyzer (PSA), dan X-Ray Photoemission Spectroscopy (XPS). Hasil analisis menggunakan XRD menunjukkan bahwa penambahan B dan N terhadap rGO tidak menyebabkan perubahan struktur, di mana tidak terdapat pergeseran puncak pada pola difraksi dan ketiga sampel menunjukkan adanya puncak lebar di sekitar sudut 24o dan 44o. Spektrum FTIR menunjukkan adanya beberapa gugus fungsional oksigen, namun penambahan B dan N tidak dapat dikonfirmasi karena jumlah partikel rGO yang mendominasi. Hasil citra SEM menunjukkan citra berbentuk lembaran tipis bertumpuk. Dari hasil EDX, penambahan B masih belum dapat teramati karena pengujian EDX yang hanya pada permukaan atau bagian sampel yang menjadi target pengujian memang tidak mengandung B. Dari analisis PSA, penambahan B dan N tidak memiliki pengaruh yang signifikan terhadap ukuran partikel dan ketiga sampel menunjukkan distribusi ukuran partikel yang homogen. Penambahan B dan N dapat dikonfirmasi dengan uji XPS, di mana dekonvolusi spektrum mengidentifikasi adanya ikatan antar karbon, karbon-oksigen, dan karbon dengan B/N. ================================================================================================ Reduced graphene oxide (rGO) is a form of activated carbon with a structure similar to graphene, save for a few defects in its structure. As a derivative of graphene, rGO has many applications, one of which is a semiconductor material. The doping process could alter the energy band gap in rGO. B-doped rGO would produce p-type semiconductors, while N-doped rGO would produce n-type semiconductors. This research aims to analyze the structure and morphology of rGO doped with B dan N. The characterizations used in this research are X-Ray Diffraction (XRD), Fourier Transform Infrared (FTIR), Scanning Electron Microscope/ Energy Dispersive X-Ray (SEM/EDX), Particle Size Analyzer (PSA), and X-Ray Photoemission Spectroscopy (XPS). Analysis using XRD shows that all samples exhibit broad peaks around 24o and 44o and no shift in peaks are detected after rGO was doped with B and N, indicating that the doping process does not result in significant changes in the structure. FTIR spectrum confirms the functional groups typically present in rGO, but the presence of B and N could not be confirmed because of the high concentration of rGO. SEM images show flake-like structures. EDX analysis shows that no B is detected, possibly due to the analysis done only on the surface or that the sample region did not contain B components. Particle size and homogeneity are not affected by the doping process, as shown by PSA. The doping process of B and N was successful, as confirmed using XPS analysis, where peak deconvolution was used to identify the bonds associated with carbon, carbon-oxygen, as well as B and N.

Item Type: Thesis (Undergraduate)
Uncontrolled Keywords: Boron (B), Grafena oksida tereduksi (rGO), Morfologi, Morphology, Nitrogen (N), Reduced graphene oxide (rGO), Structure, Struktur
Subjects: Q Science > QC Physics
Q Science > QC Physics > QC610.3 Electric conductivity
Q Science > QC Physics > QC631.D29 Electrodynamics.
Q Science > QD Chemistry > QD341.H9 Graphene
T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK452 Electric apparatus and materials
Divisions: Faculty of Science and Data Analytics (SCIENTICS) > Physics > 45201-(S1) Undergraduate Thesis
Depositing User: Pramitha Yuniar Diah Maulida
Date Deposited: 20 Aug 2021 05:40
Last Modified: 20 Aug 2021 05:40
URI: https://repository.its.ac.id/id/eprint/87888

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