Adila, Ahmad Firyal (2020) Desain DC-DC Converter Menggunakan SiC MOSFET untuk Aplikasi Tegangan Tinggi. Masters thesis, Institut Teknologi Sepuluh Nopember.
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Abstract
Pengembangan rangkaian pengisi daya telah banyak ditemui pada bidang industri dan kesehatan. Peran dari pengisi daya menjadi sangat vital pada aplikasi tegangan tinggi karena dibutuhkan perangkat dengan cost yang rendah dan compactness. Untuk itu diperlukan sakelar semikonduktor yang mampu bekerja pada kondisi tersebut. SiC MOSFET adalah perangkat baru yang mempunyai keunggulan mampu beroperasi pada frekuensi switching tinggi, meningkatkan efisiensi sistem, dan kerapatan daya. Penelitian ini berfokus pada desain dan pengembangan pengisi daya menggunakan SiC MOSFET (Silicon Carbide – Metal Oxide Semiconductor Field Effect Transistor) untuk aplikasi tegangan tinggi, yaitu PPG (Pulsed Power Generator). Topologi DC-DC converter yang digunakan pada penelitian ini adalah single-forward type. Topologi tersebut digunakan karena mempunyai konstruksi yang sederhana dan mampu mengurangi penggunaan jumlah komponen pada rangkaian. Perangkat pengisi daya dioperasikan pada frekuensi tinggi yaitu 500 kHz dan mampu mencapai target charging voltage 1000 V pada waktu pengisian 600 µs. Energi keluaran yang dihasilkan sebesar 0.625 J.
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The development of a series of chargers has been found in many fields of industry and health. The role of the charger is vital in high voltage applications since it must have low-cost manufacturing and compactness. In addition, we need a semiconductor switch that is able to work in these conditions. SiC MOSFET is a new device that has the advantage of being able to operate at high switching frequencies, increasing system efficiency and power density. This research focuses on designing and developing a charger using SiC MOSFET (Silicon Carbide - Metal Oxide Semiconductor Field Effect Transistors) for high voltage applications, specifically in PPG (Pulsed Power Generator). PPG consists of a charging system, control circuit, and PPM (Pulsed Power Modulator). In this study, the DC-DC converter topology used is the single-forward type. The topology is used because it has a simple construction and can reduce the use of the number of components in the circuit. The charging device is operated at high frequency which is 500 kHz and can reach the charging voltage of 1000 V at a time of charging 600 µs. The output energy produced is 0.625 J.
| Item Type: | Thesis (Masters) |
|---|---|
| Additional Information: | RTE 621.381 5 Adi d-1 2020 |
| Uncontrolled Keywords: | DC-DC converter, pengisi daya, pulsed power, SiC MOSFET, single-forward type |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7868.P6 Power supply |
| Divisions: | Faculty of Intelligent Electrical and Informatics Technology (ELECTICS) > Electrical Engineering > 20101-(S2) Master Thesis |
| Depositing User: | Ahmad Firyal Adila |
| Date Deposited: | 14 May 2024 03:59 |
| Last Modified: | 14 May 2024 03:59 |
| URI: | http://repository.its.ac.id/id/eprint/73756 |
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