Mitigasi Fenomena Very Fast Transient Overvoltages Pada Disconnecting Switch Paling Terdampak Siginifikan Di Gas Insulated Switchgear 150 kV

Khoiri, Rizky Agung (2024) Mitigasi Fenomena Very Fast Transient Overvoltages Pada Disconnecting Switch Paling Terdampak Siginifikan Di Gas Insulated Switchgear 150 kV. Other thesis, Institut Teknologi Sepuluh Nopember.

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Abstract

Gardu induk berinsulasi gas (GIS) telah digunakan secara hampir menyeluruh di seluruh dunia. Karena strukturnya yang ringkas menjadi alasan utama kenapa gardu induk banyak di gunakan. Saat saklar isolasi atau pemutus sirkuit dioperasikan, menyebabkan Frekuensi osilasi yang sangat tinggi yang akhirnya menyebabkan fenomena Very Fast Transient Overvoltages (VFTO). VFT pada GIS dapat dibagi menjadi mode internal dan eksternal. Transien internal dapat menciptakan perbedaan tegangan antara konduktor dalam dan selungkup, sedangkan transien eksternal dapat menimbulkan tegangan (stress) pada peralatan sekunder dan peralatan yang berdekatan. Proses pengumpulan data dalam tugas akhir ini melibatkan pengumpulan informasi berupa data dan fakta yang dibutuhkan untuk topik penilitian ini. Pemodelan sistem mencakup proses membuat rancangan simulasi berdasarkan hasil penelitian literatur yang telah dikumpulkan. Untuk memodelkan GIS, program EMTP digunakan. Sistem GIS terdiri dari tiga fasa simetris dengan setiap fasa berada di selungkup yang berbeda. Metode mitigasi yang digunakan untuk menekan nilai Very Fast Transient Overvoltages (VFTO) umumnya ada banyak, tetapi pada tugas akhir ini hanya berfokus pada 3 metode yaitu Damping Resistor, Ferrite Rings, Nanocrystalline Rings. Salah satu metode baru untuk meredam VFTO adalah dengan metode Nanocrystalline Rings.Dari 3 metode diatas di modelkan dan di rangkai di dalam Komponen DS.Pada simulasi yang dilakukan di Perangkat Lunak EMTP, simulasi untuk melihat nilai VFTO hanya berfokus Pada DS saja. Simulasi dilakukan dengan berurutan dari DS 1 hingga DS 47, setiap simulasi DS yang disimulasikan berada pada kondisi switching Menutup sedangkan DS lainnya dalam kondisi Tertutup, dari hal itu maka simulasi dilakukan sebanyak jumlah DS yang di teliti. Nilai VFTO dapat dilihat pada setiap DS dengan cara meletakkan Voltage Scope di keluaran DS. Metode mitigasi yang di terapkan menggunakan Damping Resistor, Ferrite Rings, dan Nanocrystalline Rings. VFTO terdapat di semua Disconnecting Switch (DS) yang berada pada GIS kedinding 150 kV, Lokasi Disconnecting Switch (DS) yang memiliki VFTO tertinggi terdapat pada DS 2 dan 3.
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Gas-insulated substations (GIS) have been used almost extensively around the world. Its compact structure is the main reason why substations are widely used. When an isolating switch or circuit breaker is operated, it causes a very high oscillation frequency which eventually leads to Very Fast Transient Overvoltages (VFTO) phenomenon. VFTs in GIS can be divided into internal and external modes. Internal transients can create a voltage difference between the inner conductor and the enclosure, while external transients can induce stress on secondary equipment and adjacent equipment. The data collection process in this final project involves gathering information in the form of data and facts needed for this research topic. System modeling includes the process of creating a simulation design based on the results of the literature research that has been collected. To model the GIS, the EMTP program was used. The GIS system consists of three symmetrical phases with each phase in a different enclosure. There are many mitigation methods used to suppress the value of Very Fast Transient Overvoltages (VFTO), but in this final project only focuses on 3 methods namely Damping Resistor, Ferrite Rings, Nanocrystalline Rings. One of the new methods to reduce VFTO is the Nanocrystalline Rings method. The 3 methods above are modeled and assembled in the DS Component. In simulations conducted in EMTP Software, simulations to see the value of VFTO only focus on DS. Simulations are carried out sequentially from DS 1 to DS 47, each simulated DS is in the Closed switching condition while the other DS is in the Closed condition, from that, the simulation is carried out as many times as the number of DSs studied. The VFTO value can be seen on each DS by placing the Voltage Scope at the DS output. The mitigation method applied uses Damping Resistor, Ferrite Rings, and Nanocrystalline Rings. VFTO is found in all Disconnecting Switches (DS) located in the 150 kV walled GIS, Disconnecting Switch (DS) locations that have the highest VFTO are DS 2 and 3.

Item Type:	Thesis (Other)
Uncontrolled Keywords:	Very Fast Transient Overvoltage (VFTO), Disconnecting Switch (DS),Gas Insulated Switchgear, EMTP
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK152.A75 Electrical engineering--Safety measures T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK3226 Transients (Electricity). Electric power systems. Harmonics (Electric waves). T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK3401 Insulation and insulating materials T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK5103.8 Switching systems
Divisions:	Faculty of Intelligent Electrical and Informatics Technology (ELECTICS) > Electrical Engineering > 20201-(S1) Undergraduate Thesis
Depositing User:	Rizky Agung Khoiri
Date Deposited:	30 Jul 2024 03:16
Last Modified:	30 Jul 2024 03:16
URI:	http://repository.its.ac.id/id/eprint/109777

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