Rancang Bangun Sistem Pengendalian Temperatur Berbasis Fuzzy PID untuk Analisis Energy Band Gap Material Semikonduktor

Firmansyah, Rifky (2026) Rancang Bangun Sistem Pengendalian Temperatur Berbasis Fuzzy PID untuk Analisis Energy Band Gap Material Semikonduktor. Other thesis, Institut Teknologi Sepuluh Nopember.

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Abstract

Sistem pengendalian temperatur yang akurat dan adaptif sangat krusial dalam pengukuran energi celah pita semikonduktor untuk meminimalisir deviasi hasil akhir nilai energi celah pita. Penelitian ini menerapkan sistem pengendalian temperatur berbasis Fuzzy PID pada pengukuran energy band gap untuk meningkatkan stabilitas dan performa sistem dibandingkan PID konvensional yang dinilai kurang responsif. Pengukuran energi celah pita dilakukan menggunakan metode forward bias pada sampel dioda Silikon (Si) dan Germanium (Ge). Hasil penelitian menunjukkan Fuzzy-PID memiliki performa lebih baik dengan error steady state sebesar 0,65% pada setpoint 50°C dan 0,89% pada setpoint 80°C. Nilai tersebut lebih kecil dibanding PID konvensional yang masing-masing sebesar 1,67% dan 1,56%. Pengukuran otomatis energi celah pita Silikon menghasilkan rentang 1,0601 ± 0,0072 eV hingga 1,0833 ± 0,0075 eV. Pada Germanium, variasi arus 18 mA dan 25 mA masing-masing menghasilkan nilai 0,7706 ± 0,1352 eV dan 0,617 ± 0,0755 eV. Hasil ini terbukti lebih akurat dan mendekati nilai teoritis yakni sebesar 1,1 eV untuk Silikon dan 0,67 eV untuk Germanium dibandingkan metode manual pada variasi arus yang sama. Secara keseluruhan, sistem pengendalian temperatur berbasis Fuzzy-PID terbukti valid dan efektif dalam meningkatkan efisiensi serta akurasi analisis karakteristik material semikonduktor
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An accurate and adaptive temperature control system is crucial in semiconductor band gap energy measurements to minimize deviations in the final band gap energy values. This study implements a Fuzzy PID–based temperature control system in band gap energy measurements to improve system stability and performance compared to conventional PID control, which is considered less responsive. Band gap energy measurements were carried out using the forward bias method on Silicon (Si) and Germanium (Ge) diode samples. The results show that the Fuzzy-PID controller provides better performance, with steady-state errors of 0.65% at a 50 °C setpoint and 0.89% at an 80 °C setpoint. These values are smaller than those obtained using conventional PID control, which are 1.67% and 1.56%, respectively. Automatic band gap energy measurements for Silicon produced values ranging from 1.0601 ± 0.0072 eV to 1.0833 ± 0.0075 eV. For Germanium, current variations of 18 mA and 25 mA yielded band gap energies of 0.7706 ± 0.1352 eV and 0.617 ± 0.0755 eV, respectively. These results are proven to be more accurate and closer to the theoretical values of 1.1 eV for Silicon and 0.67 eV for Germanium compared to manual measurement methods at the same current variations. Overall, the Fuzzy-PID–based temperature control system is proven to be valid and effective in improving the efficiency and accuracy of semiconductor material characteristic analysis.

Item Type:	Thesis (Other)
Uncontrolled Keywords:	Energi Celah Pita, Fuzzy PID, Kontrol Temperatur Energy Band Gap, Fuzzy PID, Temperature Control
Subjects:	T Technology > TJ Mechanical engineering and machinery > TJ223 PID controllers
Divisions:	Faculty of Vocational > Instrumentation Engineering
Depositing User:	Rifky Firmansyah
Date Deposited:	28 Jul 2026 02:19
Last Modified:	28 Jul 2026 02:19
URI:	http://repository.its.ac.id/id/eprint/138057

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