Rancang Bangun Instrument Pengukuran Energy Band Gap Pada Bahan Semikonduktor Berdasarkan Karakterisasi Arus Dan Tegangan

Firmansyah, Dimas Dwi (2026) Rancang Bangun Instrument Pengukuran Energy Band Gap Pada Bahan Semikonduktor Berdasarkan Karakterisasi Arus Dan Tegangan. Other thesis, Institut Teknologi Sepuluh Nopember.

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Abstract

Penentuan energy band gap merupakan parameter penting dalam karakterisasi bahan semikonduktor, namun proses pengukurannya sering terkendala keterbatasan sistem yang terintegrasi, sensitif, dan terjangkau. Penelitian ini bertujuan merancang dan membangun instrumen pengukuran energy band gap berdasarkan karakterisasi arus dan tegangan pada dioda Germanium (1N60) dan Silikon (1N4148) dalam kondisi reverse bias. Sistem menggunakan sensor Transimpedance Amplifier (TIA) berbasis IC MCP6002 untuk pengukuran arus mikroampere dan sensor INA219 untuk pengukuran tegangan. Akuisisi data dilakukan menggunakan mikrokontroler STM32F401CCU6 yang terintegrasi dengan interface (GUI) berbasis Rust untuk visualisasi real-time, regresi linear otomatis, dan penyimpanan data SQLite. Metode penentuan energy band gap dilakukan melalui analisis hubungan arus saturasi balik terhadap temperatur. Hasil validasi menunjukkan error sensor tegangan sebesar 0,06% dan sensor arus sebesar 1,37% setelah kalibrasi. Pengujian menghasilkan nilai energy band gap Germanium sebesar 0,557–0,8362 eV dan Silikon sebesar 1,278–1,6283 eV. Instrumen yang dirancang mampu mengakuisisi dan mengolah data dengan baik serta berpotensi menjadi solusi praktikum dan riset semikonduktor yang efisien dan berbiaya rendah.
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Determining the energy band gap is an important parameter in semiconductor material characterization; however, the measurement process is often limited by the lack of integrated, sensitive, and affordable systems. This research aims to design and develop an energy band gap measurement instrument based on current and voltage characterization of Germanium (1N60) and Silicon (1N4148) diodes under reverse bias conditions. The system employs a Transimpedance Amplifier (TIA) sensor using the MCP6002 IC for microampere current measurement and an INA219 sensor for voltage measurement. Data acquisition is performed using an STM32F401CCU6 microcontroller integrated with a Rust-based graphical user interface (GUI) for real-time visualization, automatic linear regression, and SQLite data storage. The energy band gap extraction method is based on the relationship between reverse saturation current and temperature variation. Validation results show voltage sensor and current sensor errors of 0.06% and 1.37%, respectively, after calibration. The measured energy band gap values ranged from 0.557–0.8362 eV for Germanium and 1.278–1.6283 eV for Silicon. The developed instrument is capable of acquiring and processing data effectively and has the potential to serve as an efficient and low-cost solution for semiconductor laboratory practicum and research activities.

Item Type:	Thesis (Other)
Uncontrolled Keywords:	Energy Band Gap, Reverse Bias, Dioda Semikonduktor, Kurva IV, Transimpedance Amplifier, Energy Band Gap, Reverse Bias, Semiconductor Diode, IV Curve, Transimpedance Amplifier.
Subjects:	Q Science > QC Physics > QC100.5 Measuring instruments (General)
Divisions:	Faculty of Vocational > Instrumentation Engineering
Depositing User:	Dimas Dwi Firmansyah
Date Deposited:	30 Jul 2026 08:03
Last Modified:	30 Jul 2026 08:03
URI:	http://repository.its.ac.id/id/eprint/139673

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