Wardhani, Ayu Kusuma (2016) Analisis Perilaku Difusi Dan Rapat Arus Sel Surya Multijunction Semikonduktor Golongan Iii-V Terhadap Ketebalan Sel. Masters thesis, Institut Teknologi Sepuluh Nopember.
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Abstract
Sel surya adalah suatu piranti yang dapat menyerap radiasi matahari dan mengubahnya menjadi energi listrik. Di dalam penelitian ini, bahan semikonduktor yang digunakan adalah compound crystal III-V dengan metode multijunction P-N. Konfigurasi yang diterapkan terdiri dari 3 macam lapisan, yaitu double junction(AlAs-InGaP), triple junction (AlAs-InGaP-GaSb) dan multi junction (AlAs-InGaP-GaSb-InAs). Pada penelitian ini, parameter yang dibuat bervariasi adalah bandgap sel surya dan ketebalan dari sel tersebut. Berdasarkan konfigurasi tersebut diatas, dilakukan perhitungan analitis untuk mengetahui nilai rapat arus yang mempengaruhi besar efisiensi sel surya. Hasil perhitungan tersebut dibandingkan dengan perhitungan berdasarkan teori. Dari penelitian ini diketahui tebal sel surya dapat diprediksi dengan perhitungan analitis dengan tebal maksimum diperoleh dari lebar deplesi dan jarak difusi pembawa muatan minoritas sedangkan tebal minimum menggunakan medan listrik. Seharusnya dalam perhitungan digunakan pendekatan melalui nilai absorbansi. Semakin tinggi doping maka tebal semakin turun. Nilai VOC dan ISC juga dipengaruhi oleh doping, semakin tinggi doping nilai ISC akan turun dan nilai VOC akan naik. Nilai efisiensi maksimal didapatkan dari sel surya multijunction compound crystal AlAs-InGaP-GaSb-InAs. Hal tersebut dikarenakan, semakin lebar rentang panjang gelombang cahaya matahari yang diserap maka makin besar efisiensi yang dihasilkan. Selain itu, dari pengaruh ketebalan didapatkan kesimpulan bahwa efisiensi tertinggi didapatkan dari ketebalan sel 40µm.
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Solar cell is a device that can absorb solar radiation and convert it into electricity. In this study, the materials used are multi junction semiconductors III-V compound crystal heterojunction. The constant variable in this solar cells design are length and width of each layer in P-N cells, while the variety of this design is material’s bandgap. There are 3 configurations of solar cells that produced in this project: double junction solar cells (AlAs-InGaP), triple junction solar cells (AlAs-InGaP-GaSb) and multi junction solar cells (AlAs-InGaP-GaSb-InAs). In this research, the variation parameters are solar cell’s bandgap and it thickness. Based on the above configuration, performed analytical calculations to determine the value of the current density which affects the efficiency of solar cells. The results of these calculations compared to calculations based on theory. From this research note thick solar cells can be predicted by analytical calculations obtained with maximum thickness of the width of depletion and diffusion distance of minority carriers whereas the minimum thickness using an electric field. Supposed to be used in the calculation of the approach through absorbance values. The higher the doping, the thicker the more down. VOC and ISC value is also influenced by doping, doping the higher the ISC values going down and VOC going up. Values obtained from the maximum efficiency multijunction solar cells compound crystal pedestal-InGaP-GaSb-InAs. That is because, the wider the range of wavelengths of sunlight that is absorbed, the greater the efficiencies generated. In addition, the influence of the thickness of it was concluded that the highest efficiency is obtained from a cell thickness of 40µm.
| Item Type: | Thesis (Masters) |
|---|---|
| Uncontrolled Keywords: | perilaku difusi dan rapat arus pada ketebalan sel, sel surya mutijunction, semikonduktor compound crystal III-V |
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK3226 Transients (Electricity). Electric power systems. Harmonics (Electric waves). |
| Divisions: | Faculty of Industrial Technology > Physics Engineering > 30101-(S2) Master Thesis |
| Depositing User: | AYU KUSUMA WARDHANI |
| Date Deposited: | 04 May 2017 04:02 |
| Last Modified: | 27 Dec 2018 08:39 |
| URI: | http://repository.its.ac.id/id/eprint/41151 |
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