Identifikasi Properti Termoelektrik Lapisan Tipis Berbahan Dasar ZnO Dopping WO3

Kurniya, Retno (2019) Identifikasi Properti Termoelektrik Lapisan Tipis Berbahan Dasar ZnO Dopping WO3. Other thesis, Institut Teknologi Sepuluh Nopember.

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Abstract

Penelitian ini bertujuan untuk membuat lapisan tipis menggunakan material ZnO dopping WO3 serta untuk mengetahui perbandingan properti termoelektrik dan ketebalan lapisan tipis setelah. Tahapan dalam melakukan penelitian ini meliputi sintesis material, sputtering lapisan tipis menggunakan mesin DC Magnetron Sputtering, dan pengujian XRD dan ZEM-3 serta pengukuran ketebalan lapisan tipis. Berdasarkan hasil pengujian ZEM-3 diperoleh perbandingan properti termoelektrik material, dimana nilai resistivitas dan nilai Koefisien Seebeck material ZnO dopping WO3 semakin bertambah seiring dengan menurunnya temperatur. Sedangkan nilai resistivitas dan nilai Koefisien Seebeck material ZnO hanya terdapat dalam temperatur 25⁰C. Selain itu, nilai power factor tertinggi pada material ZnO dopping WO3 adalah sebesar 1,3×10-2 W/mK2, sedangkan material ZnO sebesar 3,3×10-2 µW/mK2. Ketebalan lapisan tipis rata-rata untuk material ZnO sebesar 1,58×102 nm sedangkan material ZnO dopping WO3 sebesar 3,81×102 nm.
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This research study aims to make thin film using ZnO dopping WO3 material and to compare the thermoelectric properties and the thickness of the thin film of the two materials. The steps in this study are synthesis material, sputtering using a DC Magnetron Sputtering machine, and XRD and ZEM-3 testing and thin layer thickness measurements. Based on the results of the ZEM-3 test, a comparison of thermoelectric properties for both materials, where the value of resistivity and the coefficient value of Seebeck ZnO dopping WO3 material increases with temperature. While the resistivity value and the Seebeck coefficient value of ZnO material are only found in temperatures of 25⁰C. In addition, the highest power factor value in ZnO dopping WO3 material is 1.3×10-2 W / mK2, while ZnO material is 3.3×10-2 µW / mK2. The thickness of thin film for ZnO material is 1.58×102 nm while ZnO dopping WO3 material is 3.81×102 nm nm.

Item Type:	Thesis (Other)
Uncontrolled Keywords:	DC Magnetron Sputtering, Lapisan tipis Termoelektrik.
Subjects:	Q Science > QC Physics > QC 611.97.T46 Temperature effects. Including transition temperature
Divisions:	Faculty of Natural Science > Physics > 45201-(S1) Undergraduate Thesis
Depositing User:	Retno Kurniya
Date Deposited:	20 Jul 2026 01:52
Last Modified:	20 Jul 2026 01:52
URI:	http://repository.its.ac.id/id/eprint/66201

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