Alfani, Denny (2021) Perancangan High-Speed Gate-Driver Untuk Mengurangi Switching Loss Pada Half Bridge SiC Mosfet. Undergraduate thesis, Institut Teknologi Sepuluh Nopember.
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Abstract
Kendaraan listrik menjadi salah satu keunggulan di bidang otomotif saat ini.
Salah satu komponen utama yang terus diteliti dan dikembangkan adalah kontroler.
Tumpang tindih atau overlap PWM pada kontroler ketika MOSFET sisi low dan
high aktif secara bersamaan menjadi permasalahan umum. Jika itu terjadi, banyak
arus akan mulai mengalir melalui sirkuit dan akan mulai memanaskan MOSFET
serta dapat merusaknya. Selain itu keterlambatan proses pensaklaran karena tidak
tersedianya tegangan yang cukup melalui resistor gate untuk menggerakkan
MOSFET juga menjadi masalah pada overlap PWM. Jadi untuk operasi frekuensi
tinggi, kontrol deadtime yang ketat dan pemilihan nilai resistor gate diperlukan
untuk meminimalkan sumber pembuangan panas. Hasil pengujian resistor gate
dengan nilai 1, 10, 15, 18, 20, 27, 39 Ohm menghasilkan bahwa resistor 10 Ohm
memiliki nilai arus drop paling kecil 4.77A, nilai respontime sebesar 0.18 dan
risetime paling kecil sebesar 8.5429 us dengan nilai overshoot 54.6058 %.
Pengujian deadtime dengan nilai 500, 780, 1500, 2000 ns mendapatkan hasil bahwa
perhitungan deadtime 780 ns menggunakan resistor 10 Ohm memiliki nilai losses
paling rendah pada menit ke-2, ke-4 dan ke-6 dengan nilai 1.3247W, 0.8300W,
0.1765W berturut-turut.
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Electric vehicles are one of the advantages in the automotive field today.
One of the main components that continue to be researched and developed is the
controller. PWM overlap in controller when the low and high side MOSFETs active
simultaneously is a common problem. If that happens, a lot of current will start
flowing through the circuit and it will start heating the MOSFET and can damage
it. In addition, the delay in the switching process due to the unavailability of
sufficient voltage through the gate resistor to drive the MOSFET is also a problem
in PWM overlap. So for high frequency operation, tight deadtime control and gate
resistor value selection is required to minimize heat dissipation sources. The test
results for gate resistors with values of 1, 10, 15, 18, 20, 27, 39 Ohms result that the
10 Ohm resistor have the smallest current drop 4.77A, responsetime value of 0.18
and the smallest risetime of 8.5429 us with an overshoot value of 54.6058 %.
Deadtime testing with values of 500, 780, 1500, 2000 ns shows that the 780 ns
deadtime calculation using a 10 Ohm resistor has the lowest losses in the 2nd, 4th
and 6th minutes with a value of 1.3247W, 0.8300W, 0.1765 W respectively.
| Item Type: | Thesis (Undergraduate) |
|---|---|
| Uncontrolled Keywords: | Switching, deadtime, MOSFET, frekuensi, suhu, resistor, frequency, temperature, resistor |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK201 Electric Power Transmission T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK1007 Electric power systems control |
| Divisions: | Faculty of Industrial Technology > Physics Engineering > 30201-(S1) Undergraduate Thesis |
| Depositing User: | Denny Alfani |
| Date Deposited: | 31 Aug 2021 01:56 |
| Last Modified: | 31 Aug 2021 01:56 |
| URI: | http://repository.its.ac.id/id/eprint/90917 |
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