Firdaus, Muhammad (2025) Fabrikasi dan Karakterisasi Lapisan Tipis ITO/MoS2 Menggunakan Metode Physical Vapor Deposition Untuk Aplikasi Termoelektrik. Other thesis, Institut Teknologi Sepuluh Nopember.
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Abstract
Perkembangan teknologi energi ramah lingkungan mendorong pengembangan material termoelektrik berbasis lapisan tipis, salah satunya adalah kombinasi ITO/MoS₂ yang memiliki potensi tinggi dalam aplikasi konversi energi panas menjadi listrik. Dalam penelitian ini, lapisan tipis ITO/MoS₂ berhasil difabrikasi menggunakan metode Physical Vapor Deposition (PVD) dengan parameter yang terkontrol, diikuti proses annealing pada suhu 600 °C pada substrat kaca dan silikon. Karakterisasi struktur kristal dan morfologi permukaan menggunakan XRD dan SEM menunjukkan bahwa perlakuan annealing meningkatkan kristalinitas dan homogenitas permukaan, ditandai dengan munculnya bidang difraksi intens pada fase 2H-MoS₂ dan struktur kubik ITO. Analisis EDX mengonfirmasi keberadaan unsur penyusun yang sesuai, sedangkan pengujian termoelektrik menggunakan ZEM-3 menunjukkan bahwa lapisan pada substrat silikon memiliki performa termoelektrik yang lebih baik dibandingkan substrat kaca. Setelah proses annealing, resistivitas lapisan menurun hingga 0,02106 mΩ·cm, koefisien Seebeck meningkat hingga 296,40 μV/K, dan faktor daya maksimum tercatat sebesar 41.716 μW/m·K² pada suhu 767 K. Hasil ini menunjukkan bahwa lapisan tipis ITO/MoS₂ merupakan material semikonduktor tipe-n yang sangat menjanjikan untuk aplikasi termoelektrik berbasis lapisan tipis (thin film) pada sistem konversi energi masa depan.
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The advancement of environmentally friendly energy technologies has driven the development of thin-film-based thermoelectric materials, one of which is the ITO/MoS₂ combination that shows great potential for heat-to-electricity energy conversion applications. In this study, ITO/MoS₂ thin films were successfully fabricated using the Physical Vapor Deposition (PVD) method under controlled parameters, followed by annealing at 600 °C on both glass and silicon substrates. Structural and morphological characterizations using XRD and SEM revealed that the annealing treatment enhanced crystallinity and surface homogeneity, as indicated by the appearance of intense diffraction peaks corresponding to the 2H-MoS₂ phase and cubic ITO structure. EDX analysis confirmed the presence of constituent elements, while thermoelectric measurements using ZEM-3 demonstrated that films on silicon substrates exhibited better thermoelectric performance compared to those on glass. After annealing, the film’s resistivity decreased to 0.02106 mΩ·cm, the Seebeck coefficient increased to 296.40 μV/K, and the highest power factor achieved was 41,716 μW/m·K² at 767 K. These results confirm that the ITO/MoS₂ thin film is an n-type semiconductor with strong potential as a thin-film thermoelectric material for future energy applications.
| Item Type: | Thesis (Other) |
|---|---|
| Uncontrolled Keywords: | Annealing, ITO/ MoS₂, Lapisan tipis, Physical Vapor Deposition, Termoelektrik, Annealing, ITO/ MoS₂, Lapisan tipis, Physical Vapor Deposition, Thermoelectric. |
| Subjects: | Q Science > QC Physics > QC100 Crystals. Q Science > QC Physics > QC173.4.C63 Composite materials Q Science > QC Physics > QC320 Heat transfer Q Science > QE Geology > QE389.2 Crystallography. T Technology > TJ Mechanical engineering and machinery > TJ808 Renewable energy sources. Energy harvesting. T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK2950 Thermoelectric materials. T Technology > TS Manufactures > TS695 Physical/Chemical vapor deposition |
| Divisions: | Faculty of Science and Data Analytics (SCIENTICS) > Physics > 45201-(S1) Undergraduate Thesis |
| Depositing User: | Muhammad Firdaus |
| Date Deposited: | 01 Aug 2025 08:04 |
| Last Modified: | 01 Aug 2025 08:04 |
| URI: | http://repository.its.ac.id/id/eprint/124601 |
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